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Course, academic year 2023/2024
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New Materials and Technologies - NOOE114
Title: Nové materiály a technologie
Guaranteed by: Institute of Physics of Charles University (32-FUUK)
Faculty: Faculty of Mathematics and Physics
Actual: from 2022
Semester: both
E-Credits: 3
Hours per week, examination: 2/0, Ex [HT]
Capacity: unlimited
Min. number of students: unlimited
4EU+: no
Virtual mobility / capacity: no
State of the course: taught
Language: English, Czech
Teaching methods: full-time
Teaching methods: full-time
Note: you can enroll for the course in winter and in summer semester
Guarantor: doc. Ing. Eduard Belas, CSc.
Annotation -
Last update: RNDr. Vladimír Kopecký, Ph.D. (21.09.2021)
Semiconductor materials and electronic devices for optoelectronic applications in the infrared, visible, X-ray and gamma regions of the spectrum. Growth of single crystals, wafer processing, preparation of electronic structures. Characterization techniques. Vacuum technology. Applications (light sources, radiation detectors, solar cells, special optoelectronics).
Aim of the course -
Last update: doc. Ing. Eduard Belas, CSc. (06.06.2023)

The lecture is suitable for students of all levels of study (bachelor's, master's, doctoral). Students will expand their knowledge of existing and new materials, used mainly in electronic and optoelectronic applications.

They will be acquainted with the technology of preparation of these materials, with characterization techniques and current applications.

The classroom and the time of the lecture will be fixed at the beginning of the semester after consultation with the enrolled students.

Course completion requirements -
Last update: doc. Ing. Eduard Belas, CSc. (20.09.2021)

Oral examination

Literature -
Last update: doc. Ing. Eduard Belas, CSc. (06.06.2023)

H.Frank, Fyzika a technika polovodičů, SNTL Praha 1990,

D.K.Schroder, Semiconductor Material and Device Characterization, Wiley-IEEE Press, ISBN: 978-0-471-73906-7

P.Capper, Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, 2005, Ed. P. Capper, Wiley, ISBN 0-470-85142-2

P. Rudolph, Handbook of Crystal growth, Second Edition, 2015, Ed. P. Rudolph, Elsevier, ISBN 978-0-444-63303-3, DOI: https://doi.org/10.1016/C2013-0-09791-5

Suitable papers in scientific journals.

Requirements to the exam -
Last update: doc. Ing. Eduard Belas, CSc. (20.09.2021)

The requirements for the oral part of the exam correspond to the syllabus that was presented at the lecture. The student will receive a total of two questions, one of the materials, the other of the applications.

Syllabus -
Last update: doc. Ing. Eduard Belas, CSc. (20.09.2021)

A. Materials

Semiconductor band structure and related properties

Narrow and wide bandgap materials for infrared, visible, x-ray and gamma ray applications(Si, Ge, GaAs, CdTe/CdZnTe, SiC, GaN, perovskites. Generaly semiconductors from group IV, III-V, II-VI, II-IV).

Non-semiconducor materials: Saphire, fulerenes

Single crystal preparation. Crystal growth from the melt, Liquid phase epitaxy (LPE), Vapor phase epitaxy (VPE), molecular beam epitaxy (MOCVD, MBE).

Wafer procesing (Lithography, e-beam, implantation).

B. Vacuum techniques

C. Characterization technics

SEM, SIMS, STM, AFM, GDMS, EDS and other

D. Applications

Light sources, solar cells, radiation detectors

 
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