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Principles and Properties of Semiconductor Devices - NAFY079

Title:	Principy a vlastnosti polovodičových součástek
Guaranteed by:	Institute of Physics of Charles University (32-FUUK)
Faculty:	Faculty of Mathematics and Physics
Actual:	from 2022
Semester:	both
E-Credits:	3
Hours per week, examination:	2/0, Ex [HT]
Capacity:	unlimited
Min. number of students:	unlimited
4EU+:	no
Virtual mobility / capacity:	no
State of the course:	taught
Language:	Czech, English
Teaching methods:	full-time
Teaching methods:	full-time
Note:	enabled for web enrollment you can enroll for the course in winter and in summer semester

Guarantor:	doc. RNDr. Pavel Moravec, CSc. doc. Ing. Eduard Belas, CSc.

Opinion survey results Examination dates WS schedule SS schedule Noticeboard

Annotation -

Last update: RNDr. Vladimír Kopecký, Ph.D. (14.05.2020)

Principles of optoelectronic devices: P-N junction, Schottky contact, MIS structure, heterojunctions, photovoltaic phenomena (solar cells), light-emitting diodes and semiconductors lasers, photodetectors, charge-coupled devices.

Aim of the course -

Last update: doc. RNDr. Pavel Moravec, CSc. (05.11.2019)

To acquaint students with the physical fundamentals of semiconductor structures P-N transition, metal-semiconductor, metal-insulator-semiconductor, heterogeneous transitions and optoelectronic elements based on these structures.

Course completion requirements -

Last update: doc. RNDr. Pavel Moravec, CSc. (05.11.2019)

The condition for the completion of the course is successful passing the exam.

Literature -

Last update: RNDr. Vladimír Kopecký, Ph.D. (14.05.2020)

E. Klier: Polovodičové prvky I., UK, Praha 1984

E. Klier, J. Toušková: Polovodičové prvky II., SPN, Praha 1986

J. Toušek: Polovodičové prvky III., UK, Praha 1993

H. Frank: Fyzika a technika polovodičů, SNTL, Praha 1990

S.M. Sze: Physics of Semiconductor Devices, Wiley-Interscience, New York 1969

Teaching methods -

Last update: doc. RNDr. Pavel Moravec, CSc. (05.11.2019)

Lecture

Requirements to the exam -

Last update: doc. RNDr. Pavel Moravec, CSc. (05.11.2019)

The examination consists of an oral part. The exam requirements correspond to the syllabus of the subject in the extent that was presented at the lecture.

Syllabus -

Last update: doc. RNDr. Pavel Moravec, CSc. (05.11.2019)

1. P-N junction

Ideal current-voltage characteristics, field and potential distribution, junction capacity. Real characteristics of P-N junction in forward and reverse direction (breakdown types).

2. Metal-semiconductor contact

Schottky effect, ideal Schottky contact, field and space charge potential. Basic approaches to charge transport (current-voltage characteristics and Schottky diode capacitance).

3. Metal-Insulator-Semiconductor (MIS)Structure

Ideal MIS diode. Capacity of ideal and real MIS structure.

4. Heterojunctions

Isotype and anisotype heterojunctions. Energy band diagrams, influence of states on interface, charge transport.

5. Photovoltaic effects

Photoelectric properties of semiconductors, lifetime of non-equilibrium carriers, movement of charge carriers in space and time, surface effect. P-N junction illuminated parallel and perpendicular to junction.

Solar cells: principle of operation, efficiency and loss mechanisms, construction.

6. Semiconductor sources of optical radiation

Radiation generation processes. Electroluminescent devices, luminescence mechanisms. Light-emitting diodes (LED): efficiency, response time, materials.

Semiconductor lasers: stimulated emission, optical feedback, emission spectral characteristics, radiation power, efficiency. Double heterostructure lasers, construction, materials. Laser degradation.

7. Photodetectors

Characteristic parameters, factors influencing detectivity. Methods of radiation detection. Photoconductors: classification, signal-to-noise ratio, materials. Photodiodes and PIN photodiodes: operation modes, response time, signal-to-noise ratio. Schottky photodiode.

8. Semiconductor sensors

Vidicon, plumbicon. Charge-coupled devices.