|
|
|
||
|
Physical principles of semiconductor structures and optoelectronic devices: P-N junction, Schottky contact, MIS structure, heterojunctions, photovoltaic effects (solar cells), light-emitting diodes and semiconductors lasers, photodetectors, charge-coupled devices.
Last update: MORAVEC/MFF.CUNI.CZ (16.05.2008)
|
|
||
|
The objective is to familiarize students with physical principles of the semiconductor structures P-N junction, metal-semiconductor contact, metal-insulator-semiconductor structure, heterojunctions and optoelectronic devices based on these structures. Last update: MORAVEC/MFF.CUNI.CZ (16.05.2008)
|
|
||
|
The condition for completing the course is obtaining credit and passing the exam. Regular attendance and activity at seminars is necessary for obtaining the credit. Credit is a necessary condition for participation in the exam. Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
|
|
||
|
S.M. Sze: Physics of Semiconductor Devices, 2nd edition, J. Wiley, New York 1981 S.M. Sze: Semiconductor Devices ? Physics and Technology, J. Wiley, New York 1985 J. Wilson, J.F.B. Hawkes: Lasers ? Principles and Applications, Prentice-Hall, New York 1987 J.P. Colinge, C.A. Colinge: Physics of Semiconductor Devices, Kluwer, Boston 2002 H. Frank: Fyzika a technika polovodičů, SNTL, Praha 1990 J. Toušek: Polovodičové prvky III., UK, Praha 1993 Last update: MORAVEC/MFF.CUNI.CZ (16.05.2008)
|
|
||
|
lecture + seminar Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
|
|
||
|
For the examination it is necessary to obtain the credit. The examination consists of an oral part. The exam requirements correspond to the syllabus of the subject in the extent that was presented at the lecture. Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
|
|
||
|
1. P-N Junction
Current-voltage characteristics. Generation-recombination process. High-injection condition. Junction breakdown. 2. Metal-Semiconductor Contact Schottky effect. Current transport processes: current-voltage characteristics, capacitance of Schottky diodes. 3. Metal-Insulator-Semiconductor (MIS) Structure Ideal MIS diode. Surface states, surface charges, and space charges. 4. Heterojunctions Isotype and anisotype heterojunctions. Energy band diagrams, transport of charge. Two-dimensional electron gas. Superstructures. 5. Photovoltaic Effects P-N Junction illuminated parallel and perpendicular to junction. Illuminated Schottky diode. Solar cells. 6. Semiconductor Sources of Radiation Electroluminescent devices. Light-emitting diodes (LED): materials, configuration, and performance. Semiconductor lasers. Laser operating characteristics, optical feedback, calculation of basic parameters, device structure. Double heterostructure lasers. Laser degradation. 7. Photodetectors Characteristic parameters, factors influenced detectivity. Methods of radiation detection. Photoconductors: signal-to-noise ratio, materials. Photodiodes, PIN photodiodes, and avalanche photodiodes: operation modes, response time, signal-to-noise ratio. Metal-semiconductor photodiode. Phototransistor. Superlattice structures and channel diode. 8. Semiconductor Sensors Vidicon, plumbicon. SPRITE detector. Charge-coupled devices.
Last update: T_FUUK (03.05.2004)
|